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PN2369
PN2369
NPN Switching Transistor
* This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. * Sourced from process 21.
TO-92
1
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings* Ta=25C unless otherwise noted
Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Ratings 15 40 4.5 200 -55 ~ 150 Units V V V mA C
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics Ta=25C unless otherwise noted
Symbol Off Characteristics V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO Parameter Test Condition IC = 10mA, IB = 0 IC = 10A, VBE = 0 IC = 10A, IE = 0 IE = 10A, IC = 0 VCB = 20V, IE = 0 VCB = 20V, IE = 0, Ta = 125C IC = 10mA, VCE = 1.0V IC = 100mA, VCE = 2.0V IC = 10mA, IB = 1.0mA IC = 10mA, IB = 1.0mA VCB = 5.0V, IE = 0, f = 1.0MHz VEB = 0.5V, IC = 0, f = 1.0MHz IC = 10mA, VCE = 10V, RG = 2.0k, f = 100MHz IB1 = IB2 = IC = 10mA VCC = 3.0V, IC = 10mA, IB1 = 3.0mA VCC = 3.0V, IC = 10mA, IB1 = 3.0mA, IB2 = 1.5mA 5.0 0.7 40 20 Min. 15 40 40 4.5 0.4 30 120 0.25 0.85 4.0 5.0 V V pF pF Max. Units V V V V A A Collector-Emitter Breakdown Voltage * Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current
On Characteristics hFE VCE(sat) VBE(sat) Cobo Cibo hfe DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Output Capacitance Input Capacitance Small -Signal Current Gain
Small Signal Characteristics
Switching Characteristics ts ton toff Storage Time Turn-On Time Turn-Off Time 13 12 18 ns ns ns
* Pulse Test: Pulse Width 300s, Duty Cycle 2.0%
(c)2004 Fairchild Semiconductor Corporation
Rev. A, January 2004
PN2369
Thermal Characteristics Ta=25C unless otherwise noted
Symbol PD RJC RJA Parameter Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max. 350 2.8 125 357 Units mW mW/C C/W C/W
(c)2004 Fairchild Semiconductor Corporation
Rev. A, January 2004
PN2369
Package Dimensions
TO-92
4.58 -0.15
+0.25
0.46
14.47 0.40
0.10
4.58 0.20
1.27TYP [1.27 0.20] 3.60
0.20
1.27TYP [1.27 0.20]
0.38 -0.05
+0.10
3.86MAX
1.02 0.10
0.38 -0.05
+0.10
(R2.29)
(0.25)
Dimensions in Millimeters
(c)2004 Fairchild Semiconductor Corporation Rev. A, January 2004
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM FAST ActiveArrayTM FASTrTM BottomlessTM FPSTM CoolFETTM FRFETTM CROSSVOLTTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM I2CTM EnSignaTM i-LoTM FACTTM ImpliedDisconnectTM FACT Quiet SeriesTM
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SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET VCXTM
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I11

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